Active and preferred
RoHS Compliant
Lead-free

BGA7H1N6

Data Sheet
package

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BGA7H1N6
BGA7H1N6
Data Sheet

Product details

  • Frequency
    2300 - 2690 MHz
  • Gain
    12.5 dB
  • I
    4.8 mA
  • IIP3
    6 dBm
  • NF
    0.65 dB
  • P-1dB (in)
    -1 dBm
  • VCC operating
    1.5 V to 3.3 V
Recommended
OPN
BGA7H1N6E6327XTSA1
Product Status active and preferred
Infineon Package
TSNP-6-2
Package Name N/A
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:

Product Status
Active
Infineon Package
TSNP-6-2
Package Name -
Packing Size 15000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
Silicon Germanium Low Noise Amplifier for LTE

Features

  • Insertion power gain: 12.5 dB
  • Low noise figure: 0.60 dB
  • Low current consumption: 4.7 mA
  • Operating frequencies: 2300 - 2690 MHz
  • Supply voltage: 1.5 V to 3.3 V
  • Digital on/off switch (1V logic high level)
  • Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
  • B7HF Silicon Germanium technology
  • RF output internally matched to 50 Ω
  • Only 1 external SMD component necessary
  • 2kV HBM ESD protection (including AI-pin)
  • Pb-free (RoHS compliant) package

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Design resources

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